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  ? 2004 ixys all rights reserved 1 - 4 mcc 95 mcd 95 4 1 9 i trms = 2x180 a i tavm = 2x116 a v rrm = 800-1800 v data according to iec 60747 and refer to a single thyristor/diode unless otherwise stated. ixys reserves the right to change limits, test conditions and dimensions symbol conditions maximum ratings i trms , i frms t vj = t vjm 180 a i tavm , i favm t c = 85c; 180 sine 116 a i tsm , i fsm t vj = 45c t = 10 ms (50 hz), sine 2250 a v r = 0 t = 8.3 ms (60 hz), sine 2400 a t vj = t vjm t = 10 ms (50 hz), sine 2000 a v r = 0 t = 8.3 ms (60 hz), sine 2150 a i 2 dt t vj = 45c t = 10 ms (50 hz), sine 25 300 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 23 900 a 2 s t vj = t vjm t = 10 ms (50 hz), sine 20 000 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 19 100 a 2 s (di/dt) cr t vj = t vjm ; repetitive, i t = 250 a 150 a/s f = 50 hz; t p = 200 s v d = 2 / 3 v drm ; i g = 0.45 a; non repetitive, i t = i tavm 500 a/s di g /dt = 0.45 a/s (dv/dt) cr t vj = t vjm ;v dr = 2 / 3 v drm 1000 v/s r gk = ; method 1 (linear voltage rise) p gm t vj = t vjm ;t p = 30 s 10 w i t = i tavm ;t p = 300 s 5 w p gav 0.5 w v rgm 10 v t vj -40...+125 c t vjm 125 c t stg -40...+125 c v isol 50/60 hz, rms; t = 1 min 3000 v~ i isol 1 ma; t = 1 s 3600 v~ m d mounting torque (m5) 2.5-4.0/22-35 nm/lb.in. terminal connection torque (m5) 2.5-4.0/22-35 nm/lb.in. weight typical including screws 90 g features  international standard package, jedec to-240 aa  direct copper bonded al 2 o 3 -ceramic base plate  planar passivated chips  isolation voltage 3600 v~  ul registered, e 95873  gate-cathode twin pins for version 1 applications  dc motor control  softstart ac motor controller  light, heat and temperature control advantages  space and weight savings  simple mounting with two screws  improved temperature and power cycling  reduced protection circuits thyristor modules thyristor/diode modules 6 7 4 5 3 2 1 to-240 aa mcd version 8 mcc version 8 mcc version 1 3671 542 361 52 3152 31542 mcd version 1 v rsm v rrm type v dsm v drm v v version 1 b 8 b version 1 b 8 b 900 800 mcc 95-08 io1 b / io8 b mcd 95-08 io1 b / io8 b 1300 1200 mcc 95-12 io1 b / io8 b mcd 95-12 io1 b / io8 b 1500 1400 mcc 95-14 io1 b / io8 b mcd 95-14 io1 b / io8 b 1700 1600 mcc 95-16 io1 b / io8 b mcd 95-16 io1 b / io8 b 1900 1800 mcc 95-18 io1 b / io8 b mcd 95-18 io1 b / io8 b
? 2004 ixys all rights reserved 2 - 4 mcc 95 mcd 95 4 1 9 symbol conditions characteristic values i rrm , i drm t vj = t vjm ; v r = v rrm ; v d = v drm 5ma v t , v f i t /i f = 300 a; t vj = 25c 1.5 v v t0 for power-loss calculations only (t vj = 125c) 0.8 v r t 2.4 m ? v gt v d = 6 v; t vj = 25c 2.5 v t vj = -40c 2.6 v i gt v d = 6 v; t vj = 25c 150 ma t vj = -40c 200 ma v gd t vj = t vjm ;v d = 2 / 3 v drm 0.2 v i gd 10 ma i l t vj = 25c; t p = 10 s; v d = 6 v 450 ma i g = 0.45 a; di g /dt = 0.45 a/s i h t vj = 25c; v d = 6 v; r gk = 200 ma t gd t vj = 25c; v d = ? v drm 2s i g = 0.45 a; di g /dt = 0.45 a/s t q t vj = t vjm ; i t = 150 a, t p = 200 s; -di/dt = 10 a/s typ. 185 s v r = 100 v; dv/dt = 20 v/s; v d = 2 / 3 v drm q s t vj = t vjm ; i t /i f = 50 a, -di/dt = 6 a/s 170 c i rm 45 a r thjc per thyristor/diode; dc current 0.22 k/w per module other values 0.11 k/w r thjk per thyristor/diode; dc current see fig. 8/9 0.42 k/w per module 0.21 k/w d s creepage distance on surface 12.7 mm d a strike distance through air 9.6 mm a maximum allowable acceleration 50 m/s 2 optional accessories for module-type mcc 95 version 1 b keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red type zy 200l (l = left for pin pair 4/5) ul 758, style 1385, type zy 200r (r = right for pin pair 6/7) csa class 5851, guide 460-1-1 dimensions in mm (1 mm = 0.0394") mcc / mcd version 1 b mcc version 8 b mcd version 8 b version 1 or 8 without b in typ designation = without insert in mountig holes fig. 1 gate trigger characteristics fig. 2 gate trigger delay time
? 2004 ixys all rights reserved 3 - 4 mcc 95 mcd 95 4 1 9 fig. 3 surge overload current i tsm , i fsm : crest value, t: duration fig. 4 i 2 dt versus time (1-10 ms) fig. 4a maximum forward current at case temperature fig. 5 power dissipation versus on- state current and ambient temperature (per thyristor or diode) fig. 6 three phase rectifier bridge: power dissipation versus direct output current and ambient temperature
? 2004 ixys all rights reserved 4 - 4 mcc 95 mcd 95 4 1 9 fig. 7 three phase ac-controller: power dissipation versus rms output current and ambient temperature fig. 8 transient thermal impedance junction to case (per thyristor or diode) fig. 9 transient thermal impedance junction to heatsink (per thyristor or diode) constants for z thjk calculation: ir thi (k/w) t i (s) 1 0.0066 0.0019 2 0.0678 0.0477 3 0.1456 0.344 4 0.2 1.32 r thjk for various conduction angles d: d r thjk (k/w) dc 0.42 180 0.43 120 0.45 60 0.47 30 0.48 constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.0066 0.0019 2 0.0678 0.0477 3 0.1456 0.344 r thjc for various conduction angles d: d r thjc (k/w) dc 0.22 180 0.23 120 0.25 60 0.27 30 0.28


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